Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation

In this paper, the performance of GaAs and GaSb based sub-10 nm double-gate junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been studied for high-performance switching applications. The quantum transmitting boundary method (QTBM) has considered electron transport, band structures are accounted sp3d5s* tight-binding modeling. channel thickness, t ch is varied from 1.7 to 4.7 evaluate device figure merits (FOMs). thinner channel’s shows a lower OFF-state current, while ticker allows higher ON-state current. threshold voltage approximately 0.4 V DG-JLMOSFETs with = nm, whereas it reduces ~0.05 that nm. Similar characteristics shown in devices. Besides, significant impact on subthreshold swing (SS) drain-induced barrier lowering (DIBL) found compared those devices show leakage-power dissipation both materials low-intrinsic delay thicker due substantial amount energy drop. above results indicate III-V-based very promising next-generation technology.